Your browser does not support JavaScript!

Multistep junction termination extension for SiC power devices

Multistep junction termination extension for SiC power devices

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A multistep junction termination extension (MJTE) for SiC power devices, which uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricating and measuring a high-voltage implanted 4H-SiC pin diode. It is shown that MJTE is a very effective approach and can be easily implemented in experiment.


    1. 1)
      • J.W. Palmour , C.H. Carter , C.E. Weitzel , K.J. Nordquist . Diamond, SiC and nitride wide-bandgap semiconductors. Mater. Res. Soc. Symp. Proc. , 133 - 144
    2. 2)
      • D. Planson , M.L. Locatelli , S. Ortolland , J.P. Chante , H. Mitlehner , D. Stephani . Periphery protection for silicon carbide devices: state of the art andsimulation. Mater. Sci. Eng. B , 210 - 217

Related content

This is a required field
Please enter a valid email address