Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
High dielectric constant (high-k) ZrO2 films have been deposited on strained Si0.91Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(CH3)3)4] by microwave plasma enhanced chemical vapour deposition technique at a low temperature. Deposited ZrO2 films show good electrical properties and are suitable for microelectronic applications.