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Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma

Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma

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High dielectric constant (high-k) ZrO2 films have been deposited on strained Si0.91Ge0.09 epitaxial layers using zirconium tetratert butoxide [Zr(OC(CH3)3)4] by microwave plasma enhanced chemical vapour deposition technique at a low temperature. Deposited ZrO2 films show good electrical properties and are suitable for microelectronic applications.

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