5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates

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5.2% efficiency InAlGaP microcavity LEDs at 640 nm on Ge substrates

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InAlGaP microcavitv LEDs on Ge substrates emitting at 640 nm with compressively strained MQW active layers have been fabricated. The external quantum efficiency for a non-encapsulated MCLED was 5.2% at 4 mA and the device emitted 1.9 mW at 20 mA and nearly 8 mW optical output power at an injection current of 100 mA.

Inspec keywords: light emitting diodes; micromechanical resonators; III-V semiconductors; aluminium compounds; indium compounds; integrated optics; gallium compounds; micro-optics

Other keywords: 5.2 percent; 4 mA; 1.9 mW; 640 nm; injection current; Ge; InAlGaP; compressively strained MQW active layers; 100 mA; Ge substrates; mW optical output power; 8 mW; external quantum efficiency; 20 mA; InAlGaP microcavity LEDs; nonencapsulated MCLED

Subjects: Integrated optics; Light emitting diodes; Micro-optical devices and technology; Fabrication of MEMS and NEMS devices

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