InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 µm

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InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 µm

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Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 µm is reported.

Inspec keywords: quantum well lasers; III-V semiconductors; indium compounds; microdisc lasers

Other keywords: 1.6 micron; silicon wafer; CW room temperature operation; InP microdisk laser; InP-InGaAs; InP/InGaAs MQW heterostructure; Si

Subjects: Laser resonators and cavities; Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers

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