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Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

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The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10–14 mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates for high-efficiency high-power amplifiers.

Inspec keywords: gallium arsenide; III-V semiconductors; microwave power transistors; microwave power amplifiers; power bipolar transistors; indium compounds; tunnelling; microwave bipolar transistors; heterojunction bipolar transistors

Other keywords: collector-up tunnelling-collector HBT; GaInP-GaAs; fabrication; collector-emitter offset voltage; size-independent; temperature-independent; 10 to 14 mV; high-efficiency high-power amplifiers; zero-offset current-voltage characteristics

Subjects: Bipolar transistors; Amplifiers; Solid-state microwave circuits and devices; Power semiconductor devices

References

    1. 1)
      • K. Mochizuki , R.J. Welty , P.M. Asbeck , C.R. Lutz , R.E. Welser , S.J. Whitney , N. Pan . GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors(C-up TC-HBTs): optimization of fabricationprocess and epitaxial layer structure for high-efficiency high power amplifiers. IEEE Trans. Electron Devices , 12 , 2277 - 2283
    2. 2)
      • A. Girardot , A. Henkel , S.L. Delage , M.A. Diforte-Poisson , E. Chartier , D. Floriot , S. Cassette , P.A. Rolland . High performance collector-up InGaP/GaAs heterojunction bipolar transistorwith Schottky contact. Electron. Lett. , 8 , 670 - 672
    3. 3)
      • W. Liu , T. Kim , P. Ikalainen , A. Khatibzadeh . High linearity power X-band GaInP/GaAs heterojunction bipolar transistor. IEEE Electron Device Lett. , 4 , 191 - 192
    4. 4)
      • N. Bovolon , R. Schulthesis , J.-R. Mueller , P. Zwivknagl , E. Zanoni . Theoretical and experimental investigation of the collector-emitter offsetvoltage of AlGaAs/GaAs heterojunction bipolar transistors. IEEE Trans. Electron Devices , 4 , 622 - 627
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010154
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