The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10–14 mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates for high-efficiency high-power amplifiers.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010154
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