Pnp InGaAsN-based HBT with graded base doping

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Pnp InGaAsN-based HBT with graded base doping

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A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.

Inspec keywords: heterojunction bipolar transistors; aluminium compounds; III-V semiconductors; gallium arsenide; indium compounds; semiconductor doping; semiconductor device measurement

Other keywords: base doping concentration; electric field; transit time; heterojunction bipolar transistor; hole transport; peak current gain; AlGaAs/InGaAsN Pnp HBT; cut-off frequency; graded base doping; 15 GHz; AlGaAs-InGaAsN; nonself aligned HBT

Subjects: Bipolar transistors; Semiconductor doping

References

    1. 1)
      • K.D. Choquette , J.F. Klem , A.J. Fischer , O. Blum , A.A. Allerman , I.J. Fritz , S.R. Kurtz , W.G. Breiland , R. Sieg , K.M. Geib , J.W. Scott , R.L. Naone . Room temperature continuous wave InGaAsN quantum well vertical-cavitylasers emitting at 1.3 µm. Electron. Lett. , 1388 - 1390
    2. 2)
      • N.Y. Li , P.C. Chang , A.G. Baca , X.M. Xie , P.R. Sharps , H.Q. Hou . DCcharacteristics of MOVPE-grown NpN InGaP/InGaAsN DHBTs. Electron. Lett. , 81 - 83
    3. 3)
      • P.C. Chang , A.G. Baca , N.Y. Li , P.R. Sharps , H.Q. Hou , J.R. Laroche , F. Ren . InGaAsN/GaAs P-n-p heterojunction bipolar transistor. Appl. Phys. Lett. , 2788 - 2790
    4. 4)
      • S. Datta , K.P. Roenker , M.M. Cahay . A thermionic-emission-diffusionmodel for graded base Pnp heterojunction bipolar transistors. J. Appl. Phys. , 8036 - 8045
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