A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.
References
-
-
1)
-
K.D. Choquette ,
J.F. Klem ,
A.J. Fischer ,
O. Blum ,
A.A. Allerman ,
I.J. Fritz ,
S.R. Kurtz ,
W.G. Breiland ,
R. Sieg ,
K.M. Geib ,
J.W. Scott ,
R.L. Naone
.
Room temperature continuous wave InGaAsN quantum well vertical-cavitylasers emitting at 1.3 µm.
Electron. Lett.
,
1388 -
1390
-
2)
-
N.Y. Li ,
P.C. Chang ,
A.G. Baca ,
X.M. Xie ,
P.R. Sharps ,
H.Q. Hou
.
DCcharacteristics of MOVPE-grown NpN InGaP/InGaAsN DHBTs.
Electron. Lett.
,
81 -
83
-
3)
-
P.C. Chang ,
A.G. Baca ,
N.Y. Li ,
P.R. Sharps ,
H.Q. Hou ,
J.R. Laroche ,
F. Ren
.
InGaAsN/GaAs P-n-p heterojunction bipolar transistor.
Appl. Phys. Lett.
,
2788 -
2790
-
4)
-
S. Datta ,
K.P. Roenker ,
M.M. Cahay
.
A thermionic-emission-diffusionmodel for graded base Pnp heterojunction bipolar transistors.
J. Appl. Phys.
,
8036 -
8045
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010136
Related content
content/journals/10.1049/el_20010136
pub_keyword,iet_inspecKeyword,pub_concept
6
6