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Pnp InGaAsN-based HBT with graded base doping

Pnp InGaAsN-based HBT with graded base doping

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A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.

Inspec keywords: heterojunction bipolar transistors; aluminium compounds; III-V semiconductors; gallium arsenide; indium compounds; semiconductor doping; semiconductor device measurement

Other keywords: base doping concentration; electric field; transit time; heterojunction bipolar transistor; hole transport; peak current gain; AlGaAs/InGaAsN Pnp HBT; cut-off frequency; graded base doping; 15 GHz; AlGaAs-InGaAsN; nonself aligned HBT

Subjects: Bipolar transistors; Semiconductor doping

References

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      • N.Y. Li , P.C. Chang , A.G. Baca , X.M. Xie , P.R. Sharps , H.Q. Hou . DCcharacteristics of MOVPE-grown NpN InGaP/InGaAsN DHBTs. Electron. Lett. , 81 - 83
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      • P.C. Chang , A.G. Baca , N.Y. Li , P.R. Sharps , H.Q. Hou , J.R. Laroche , F. Ren . InGaAsN/GaAs P-n-p heterojunction bipolar transistor. Appl. Phys. Lett. , 2788 - 2790
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      • S. Datta , K.P. Roenker , M.M. Cahay . A thermionic-emission-diffusionmodel for graded base Pnp heterojunction bipolar transistors. J. Appl. Phys. , 8036 - 8045
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010136
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