Pnp InGaAsN-based HBT with graded base doping

Pnp InGaAsN-based HBT with graded base doping

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.


    1. 1)
      • K.D. Choquette , J.F. Klem , A.J. Fischer , O. Blum , A.A. Allerman , I.J. Fritz , S.R. Kurtz , W.G. Breiland , R. Sieg , K.M. Geib , J.W. Scott , R.L. Naone . Room temperature continuous wave InGaAsN quantum well vertical-cavitylasers emitting at 1.3 µm. Electron. Lett. , 1388 - 1390
    2. 2)
      • N.Y. Li , P.C. Chang , A.G. Baca , X.M. Xie , P.R. Sharps , H.Q. Hou . DCcharacteristics of MOVPE-grown NpN InGaP/InGaAsN DHBTs. Electron. Lett. , 81 - 83
    3. 3)
      • P.C. Chang , A.G. Baca , N.Y. Li , P.R. Sharps , H.Q. Hou , J.R. Laroche , F. Ren . InGaAsN/GaAs P-n-p heterojunction bipolar transistor. Appl. Phys. Lett. , 2788 - 2790
    4. 4)
      • S. Datta , K.P. Roenker , M.M. Cahay . A thermionic-emission-diffusionmodel for graded base Pnp heterojunction bipolar transistors. J. Appl. Phys. , 8036 - 8045

Related content

This is a required field
Please enter a valid email address