Textured and smooth AlN films prepared by Helicon sputtering system

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Textured and smooth AlN films prepared by Helicon sputtering system

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Highly-textured AlN films were obtained by using a Helicon sputtering system. This sputtering method was able to sustain the plasma in a gas atmosphere of 10-4 Torr, and, in turn, to improve the surface morphology of the film. The AlN film exhibits an extremely smooth surface with a root mean square roughness of only 3.2 Å.

Inspec keywords: aluminium compounds; sputter deposition; semiconductor thin films; surface topography; wide band gap semiconductors; piezoelectric semiconductors; piezoelectric thin films; surface texture; surface acoustic wave devices

Other keywords: highly-textured films; surface morphology; smooth film preparation; Helicon sputtering system; root mean square roughness; extremely smooth surface; 1E-4 torr; AlN; SAW device material

Subjects: Piezoelectric and ferroelectric materials; Transduction; devices for the generation and reproduction of sound; Deposition by sputtering; Sputter deposition; Thin film growth, structure, and epitaxy; Acoustic wave devices; Solid surface structure; Dielectric thin films; Piezoelectricity and electrostriction

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