Textured and smooth AlN films prepared by Helicon sputtering system
Textured and smooth AlN films prepared by Helicon sputtering system
- Author(s): C.H. Wu ; W.Y. Chiu ; H.L. Kao
- DOI: 10.1049/el:20010124
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- Author(s): C.H. Wu 1 ; W.Y. Chiu 1 ; H.L. Kao 1
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View affiliations
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Affiliations:
1: Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li, Republic of China
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Affiliations:
1: Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li, Republic of China
- Source:
Volume 37, Issue 4,
15 February 2001,
p.
253 – 255
DOI: 10.1049/el:20010124 , Print ISSN 0013-5194, Online ISSN 1350-911X
Highly-textured AlN films were obtained by using a Helicon sputtering system. This sputtering method was able to sustain the plasma in a gas atmosphere of 10-4 Torr, and, in turn, to improve the surface morphology of the film. The AlN film exhibits an extremely smooth surface with a root mean square roughness of only 3.2 Å.
Inspec keywords: aluminium compounds; sputter deposition; semiconductor thin films; surface topography; wide band gap semiconductors; piezoelectric semiconductors; piezoelectric thin films; surface texture; surface acoustic wave devices
Other keywords:
Subjects: Piezoelectric and ferroelectric materials; Transduction; devices for the generation and reproduction of sound; Deposition by sputtering; Sputter deposition; Thin film growth, structure, and epitaxy; Acoustic wave devices; Solid surface structure; Dielectric thin films; Piezoelectricity and electrostriction
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