Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant.

References

    1. 1)
      • P.G. Eliseev , A. Stintz , H. Li , G.T. Liu , T.C. Newell , K.J. Malloy , L.F. Lester . Transition dipole moment of InAs/InGaAs quantum dots fromexperiments on ultralow-threshold laser diodes. Appl. Phys. Lett. , 262 - 264
    2. 2)
      • R. Leon , G.M. Swift , B. Magness , W.A. Taylor , Y.S. Tang , K.L. Wang , P. Dowd , Y.H. Zhang . Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots. Appl. Phys. Lett. , 2074 - 2076
    3. 3)
      • D. Bimberg , M. Grundmann , N.N. Ledentsov . (1998) Quantum dot heterostructures.
    4. 4)
      • J.K. Kim , T.A. Strand , R.L. Naone , L.A. Coldren . Design parameters for lateral carrier confinement in quantum-dot lasers. Appl. Phys. Lett. , 2752 - 2754
    5. 5)
      • P.G. Piva , R.D. Goldberg , I.V. Mitchell , D. Labrie , R. Leon , S. Charbonneau , Z.R. Wasilewski , S. Fafard . Enhanced degradation resistance of quantum dot lasers to radiation damage. Appl. Phys. Lett. , 624 - 626
    6. 6)
      • E.G. Stassinopoulos , J.P. Raymond . The space radiation environment for electronics. Proc. IEEE , 1423 - 1442
    7. 7)
      • F. Heinrichsdorf , C. Ribbat , M. Grundmann , D. Bimberg . High-power quantum-dot lasers at 1100 nm. Appl. Phys. Lett. , 556 - 558
    8. 8)
      • R. Sellin , C. Ribbat , M. Grundmann , N.N. Ledentsov , D. Bimberg . Close to ideal device characteristics of high power InGaAs/GaAsquantum-dot lasers. Appl. Phys. Lett.
    9. 9)
      • N.A. Soboloev , A. Cavaco , M.C. Carmo , M. Grundmann , F. Heinrichsdorf , D. Bimberg . Enhanced radiation hardness of InAsGaAs quantum dot structures. Phys. Stat. Sol.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010118
Loading

Related content

content/journals/10.1049/el_20010118
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address