TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

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TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

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TlInGaAs/InP double heterostructure light emitting diodes with a Tl composition of 6% operating in the wavelength range of 1.58 µm have been fabricated by gas source molecular beam epitaxy and a very small temperature variation in the electroluminescence peak energy (–0.09 meV/K) observed.

Inspec keywords: light emitting diodes; indium compounds; wavelength division multiplexing; optical communication equipment; thulium compounds; optical fabrication; electroluminescence; molecular beam epitaxial growth; III-V semiconductors; gallium arsenide

Other keywords: very small temperature variation; Tl composition; TlInGaAs/InP DH LEDs; EL peak energy; gas source molecular beam epitaxy; TlInGaAs-InP; TlInGaAs-InP double heterostructure light emitting diodes; 1.58 mum; Tl; electroluminescence peak energy; small temperature variation

Subjects: II-VI and III-V semiconductors; Optical communication devices, equipment and systems; Optical fabrication, surface grinding; Vacuum deposition; Light emitting diodes; Electroluminescence (condensed matter); Vacuum deposition; Multiplexing and switching in optical communication; Optical communication equipment

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