TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy
TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy
- Author(s): K. Konishi ; H. Asahi ; O. Maeda ; Y.K. Zhou ; H.J. Lee ; A. Mizobata ; K. Asami
- DOI: 10.1049/el:20010012
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- Author(s): K. Konishi 1 ; H. Asahi 1 ; O. Maeda 1 ; Y.K. Zhou 1 ; H.J. Lee 1 ; A. Mizobata 1 ; K. Asami 1
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View affiliations
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Affiliations:
1: The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
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Affiliations:
1: The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
- Source:
Volume 37, Issue 1,
4 January 2001,
p.
49 – 50
DOI: 10.1049/el:20010012 , Print ISSN 0013-5194, Online ISSN 1350-911X
TlInGaAs/InP double heterostructure light emitting diodes with a Tl composition of 6% operating in the wavelength range of 1.58 µm have been fabricated by gas source molecular beam epitaxy and a very small temperature variation in the electroluminescence peak energy (–0.09 meV/K) observed.
Inspec keywords: light emitting diodes; indium compounds; wavelength division multiplexing; optical communication equipment; thulium compounds; optical fabrication; electroluminescence; molecular beam epitaxial growth; III-V semiconductors; gallium arsenide
Other keywords:
Subjects: II-VI and III-V semiconductors; Optical communication devices, equipment and systems; Optical fabrication, surface grinding; Vacuum deposition; Light emitting diodes; Electroluminescence (condensed matter); Vacuum deposition; Multiplexing and switching in optical communication; Optical communication equipment
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