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TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

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TlInGaAs/InP double heterostructure light emitting diodes with a Tl composition of 6% operating in the wavelength range of 1.58 µm have been fabricated by gas source molecular beam epitaxy and a very small temperature variation in the electroluminescence peak energy (–0.09 meV/K) observed.

References

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      • H. Asahi , K. Yamamoto , K. Iwata , S. Gonda , K. Oe . New III-V compound semiconductors TlInGaP for 0.9 µm to over 10µm wavelength range laser diodes and their first successful growth. Jpn. J. Appl. Phys. , L876 - L879
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      • M. Fushida , H. Asahi , K. Yamamoto , H. Koh , K. Asami , S. Gonda , K. Oe . TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy. Jpn. J. Appl. Phys. , L665 - L667
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      • H. Koh , H. Asahi , M. Fushida , K. Yamamoto , K. Takenaka , K. Asami , S. Gonda , K. Oe . Photoconductance measurement on TlInGaP grown by gas source MBE. J. Cryst. Growth , 107 - 112
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      • K. Takenaka , H. Asahi , H. Koh , K. Asami , S. Gonda , K. Oe . Growth of TlInGaAs on InP by gas source molecular beam epitaxy. Jpn. J. Appl. Phys. , 1026 - 1028
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      • A. Ayabe , H. Asahi , H.J. Lee , O. Maeda , K. Konishi , K. Asami , S. Gonda . Very small temperature-dependent bandgap energy in TlInGaAs/InP doubleheterostructures grown by gas-source molecular-beam epitaxy. Appl. Phys. Lett. , 2148 - 2150
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20010012
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