Extremely broadband InGaAsP/InP superluminescent diodes

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Extremely broadband InGaAsP/InP superluminescent diodes

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Record broadband characteristics of superluminescent diodes (SLD) are reported. Using two 87 Å In0.53Ga0.47As quantum wells and three 60 Å In0.67Ga0.33As0.72P0.28 quantum wells, the fabricated SLDs exhibit a very broad emission spectrum. The spectral width is nearly 300 nm, covering the range from 1300 to 1585.5 nm.

Inspec keywords: superluminescent diodes; semiconductor optical amplifiers; gallium arsenide; indium compounds; optical transmitters; III-V semiconductors; semiconductor quantum wells

Other keywords: 1300 to 1585.5 nm; superluminescent diodes; InGaAsP-InP; broadband characteristics; III-V semiconductors; quantum wells; SLDs; spectral width; emission spectrum

Subjects: Light emitting diodes; Semiconductor superlattices, quantum wells and related structures; Optical communication equipment

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