High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation

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The authors demonstrate high-performance AlGaN/GaN heterostructure field-effect transistors (HFETs) with mesa isolation achieved by a recently developed UV-assisted, batch processing compatible, wet etching process. HFETs with a 0.2 µm gate feature peak cutoff frequencies of fT = 43 GHz and fMAX = 98 GHz for a piezoelectric HFET grown on a sapphire substrate by molecular beam epitaxy. The transistors feature low gate diode leakage currents and display no sensitivity to visible light.

Inspec keywords: gallium compounds; isolation technology; III-V semiconductors; piezoelectric semiconductors; molecular beam epitaxial growth; aluminium compounds; junction gate field effect transistors; wide band gap semiconductors; leakage currents; semiconductor growth; ultraviolet radiation effects; piezoelectric devices; millimetre wave field effect transistors; etching

Other keywords: high-performance heterostructure field-effect transistors; 0.2 mum; peak cutoff frequencies; 98 GHz; sapphire substrate; 43 GHz; wet etching mesa isolation; molecular beam epitaxy; UV-assisted batch processing compatible wet etching process; piezoelectric HFET; AlGaN-GaN; low gate diode leakage currents; high-speed AlGaN/GaN HFETs

Subjects: Surface treatment (semiconductor technology); Piezoelectric devices; Vacuum deposition; Solid-state microwave circuits and devices; Other field effect devices; Radiation effects (semiconductor technology)

References

    1. 1)
      • C. Youtsey , I. Adesida , L.T. Romano , G. Bulman . Smooth n-type GaN surfaces by photoenhanced wet etching. J. Appl. Phys. , 560 - 562
    2. 2)
      • H. Tang , J.B. Webb , J.A. Bardwell , T. MacElwee . Growth of high-performance GaN modulation-doped field-effect transistorsby ammonia-molecular-beamepitaxy. J. Vac. Sci. Technol. A , 652 - 655
    3. 3)
      • C. Youtsey , I. Adesida , G. Bulman . Broad-area photoelectrochemical etching of GaN. Electron. Lett. , 245 - 246
    4. 4)
      • E.D. Haberer , C.-H. Chen , A. Abare , M. Hansen , S. Denbaars , L. Coldren , U. Mishra , E.L. Hu . Channeling as a mechanism for dry etch damage in GaN. Appl. Phys. Lett. , 3941 - 3943
    5. 5)
      • E. Kohn . Large signal frequency dispersion of AlGaN/GaN heterostructure fieldeffect transistors. Electron. Lett. , 1022 - 1024
    6. 6)
      • R. Dimitrov , V. Tilak , W. Yeo , B. Green , H. Kim , J. Smart , E. Chumbes , J.R. Shealy , W. Schaff , L.F. Eastman , C. Miskys , O. Ambacher , M. Stutzmann . Influence of oxygen and methane plasma on the electricalproperties of undoped AlGaN/GaN heterostructures for high power transistors. Solid-State Electron. , 1361 - 1365
    7. 7)
      • S.J. Pearton , C.R. Abernathy , C.B. Vartuli , J.D. MacKenzie , R.J. Shul , R.G. Wilson , J.M. Zavada . Hydrogen incorporation in GaN, AlN, and InN during Cl2CH4H2/ArECR plasma etching. Electron. Lett. , 836 - 837
    8. 8)
      • C. Nguyen , N.X. Nguyen , D.E. Grider . Drain current compression in GaN MODFETs under large-signal modulationat microwave frequencies. Electron. Lett.
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