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The authors demonstrate high-performance AlGaN/GaN heterostructure field-effect transistors (HFETs) with mesa isolation achieved by a recently developed UV-assisted, batch processing compatible, wet etching process. HFETs with a 0.2 µm gate feature peak cutoff frequencies of fT = 43 GHz and fMAX = 98 GHz for a piezoelectric HFET grown on a sapphire substrate by molecular beam epitaxy. The transistors feature low gate diode leakage currents and display no sensitivity to visible light.
Inspec keywords: gallium compounds; isolation technology; III-V semiconductors; piezoelectric semiconductors; molecular beam epitaxial growth; aluminium compounds; junction gate field effect transistors; wide band gap semiconductors; leakage currents; semiconductor growth; ultraviolet radiation effects; piezoelectric devices; millimetre wave field effect transistors; etching
Other keywords:
Subjects: Surface treatment (semiconductor technology); Piezoelectric devices; Vacuum deposition; Solid-state microwave circuits and devices; Other field effect devices; Radiation effects (semiconductor technology)