InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

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InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

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The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97 ps, both of which are record values for photodetectors operating at a wavelength of 1.55 µm. The average electron velocity in the depletion region is estimated to be 3.0 × 107 cm/s.

Inspec keywords: photodiodes; photodetectors; gallium arsenide; indium compounds; optical receivers; III-V semiconductors

Other keywords: 0.97 ps; InP-InGaAs; depletion region; average electron velocity; 310 GHz; GHz bandwidth; 1.55 mum; photodetectors; InP/InGaAs uni-travelling-carrier photodiode; pulse width

Subjects: Photodetectors; Photoelectric devices; Optical communication equipment

References

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      • A.F. Levi . (1995) InP HBTs: growth, processing, and applications.
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      • Ishibashi, T., Shimizu, N., Kodama, S., Ito, H., Nagatsuma, T., Furuta, T.: `Uni-traveling-carrier photodiodes', Tech. Dig. Ultrafast Electronics and Optoelectronics, 1997, p. 83–87.
    4. 4)
      • T.H. Windhorn , L.W. Cook , M.A. Haase , G.E. Stillman . Electron transport in InP at high electric fields. Appl. Phys. Lett. , 8 , 725 - 727
    5. 5)
      • H. Ito , T. Furuta , S. Kodama , T. Ishibashi . InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth. Electron. Lett. , 18 , 1556 - 1557
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