A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 µm is reported. The lowest threshold current density obtained by 50 µm wide stripe lasers was 340 A/cm2 for a cavity length of 1420 µm, which is almost comparable to the lowest value reported for GaInNAs lasers grown by molecular beam epitaxy. The threshold current density per well was 170 A/cm2, which is the lowest threshold value reported to date.
Inspec keywords: optical fabrication; indium compounds; gallium arsenide; laser beams; MOCVD; current density; III-V semiconductors; gallium compounds; quantum well lasers
Other keywords:
Subjects: Laser beam characteristics and interactions; Optical fabrication, surface grinding; Design of specific laser systems; Chemical vapour deposition; Lasing action in semiconductors; Semiconductor lasers; Chemical vapour deposition; Laser beam interactions and properties
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