Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
- Author(s): M. Kawaguchi ; E. Gouardes ; D. Schlenker ; T. Kondo ; T. Miyamoto ; F. Koyama ; K. Iga
- DOI: 10.1049/el:20001268
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- Author(s): M. Kawaguchi 1 ; E. Gouardes 1 ; D. Schlenker 1 ; T. Kondo 1 ; T. Miyamoto 1 ; F. Koyama 1 ; K. Iga 1
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View affiliations
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Affiliations:
1: Precision and Intelligence Laboratory, MicroSystem Center, Tokyo Institute of Technology, Yokohama, Japan
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Affiliations:
1: Precision and Intelligence Laboratory, MicroSystem Center, Tokyo Institute of Technology, Yokohama, Japan
- Source:
Volume 36, Issue 21,
12 October 2000,
p.
1776 – 1777
DOI: 10.1049/el:20001268 , Print ISSN 0013-5194, Online ISSN 1350-911X
A metal organic chemical vapour deposition grown GaInNAs quantum well laser emitting at 1.25 µm is reported. The lowest threshold current density obtained by 50 µm wide stripe lasers was 340 A/cm2 for a cavity length of 1420 µm, which is almost comparable to the lowest value reported for GaInNAs lasers grown by molecular beam epitaxy. The threshold current density per well was 170 A/cm2, which is the lowest threshold value reported to date.
Inspec keywords: optical fabrication; indium compounds; gallium arsenide; laser beams; MOCVD; current density; III-V semiconductors; gallium compounds; quantum well lasers
Other keywords:
Subjects: Laser beam characteristics and interactions; Optical fabrication, surface grinding; Design of specific laser systems; Chemical vapour deposition; Lasing action in semiconductors; Semiconductor lasers; Chemical vapour deposition; Laser beam interactions and properties
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