InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

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InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

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Published

A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performances over a wider temperature operation range of 30–210°C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications.

Inspec keywords: indium compounds; III-V semiconductors; gallium compounds; leakage currents; power field effect transistors; semiconductor device breakdown; junction gate field effect transistors; high-temperature electronics; gallium arsenide

Other keywords: InGaP-GaAs; high-breakdown; high-breakdown characteristics; carrier confinement; 30 to 210 C; high-temperature applications; low-leakage; InGaP/GaAs camel-like field-effect transistor; n+-GaAs/p+-InGaP/n-GaAs camel-like gate; GaAs/InGaAs double channel; HFET; gate barrier height; high-power

Subjects: Power semiconductor devices; Other field effect devices

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