Enhancing the sensitivity of Hall microsensor by minority carrier injection

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Enhancing the sensitivity of Hall microsensor by minority carrier injection

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A new parallel-field silicon Hall microsensor is proposed and investigated experimentally. Its magnetosensitivity is dramatically improved (without reducing the Hall coefficient) by electrically controlling the curvilinear majority current trajectory using minority carrier injection.

Inspec keywords: Hall effect transducers; elemental semiconductors; silicon; microsensors; magnetic sensors; minority carriers

Other keywords: Si; minority carrier injection; parallel field device; silicon Hall microsensor; sensitivity

Subjects: Microsensors and nanosensors; Magnetic variables measurement; Bulk effect devices

References

    1. 1)
      • T. Nakamura , K. Maenaka . Integrated magnetic sensors. Sens. Actuators A , 762 - 769
    2. 2)
      • Roumenin, Ch.S., Kostov, P.T.: `Hall effect sensor', Bulgaria, 37208, 26 Dec. 1983.
    3. 3)
      • Ch.S. Roumenin . (1994) Solid state magnetic sensors.
    4. 4)
      • K. Maenaka , T. Ohgusu , M. Ishida , T. Nakamura . Novel vertical Hall cells in standard bipolar technology. Electron. Lett. , 1104 - 1105
    5. 5)
      • B. Gilbert . Novel magnetic-field sensor using carrier-domain rotation: proposed devicedesign. Electron. Lett. , 608 - 610
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