InP-based 1300 nm microcavity LEDs with 9% quantum efficiency

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InP-based 1300 nm microcavity LEDs with 9% quantum efficiency

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InP-based microcavity light emitting diodes (MCLEDs) operating at a wavelength of 1300 nm are reported. An output power of 3.8 mW and total external quantum efficiency of 9% are reported. These values are to the best of the authors' knowledge the highest ever reported for an InP-based MCLED.

Inspec keywords: indium compounds; III-V semiconductors; light emitting diodes

Other keywords: InP-based microcavity LEDs; 3.8 mW; quantum efficiency; InP; 50 mA; 9 percent; 1300 nm; light emitting diodes

Subjects: Light emitting diodes

References

    1. 1)
      • De Neve, H., Blondelle, J., Van Daele, P., Demeester, P., Baets, R., Borghs, G.: `Planar substrate emitting microcavity light emitting diodes with 20%external QE', Proc. Conf. SPIE Photonics West, 10–14 February 1997, p. 74–84.
    2. 2)
      • N.E.J. Hunt , E.F. Schubert , R.F. Kopf , D.L. Sivco , A.Y. Cho , G.J. Zydzik . Increased fiber communications bandwidth form a resonant cavity lightemitting diode emitting at λ = 940 nm. Appl. Phys. Lett. , 19 , 2600 - 2602
    3. 3)
      • H. Benisty , H. De Neve , C. Weisbuch . Impact of planar microcavity effects on lightextraction: I. Basic concepts and analytical trends. IEEE J. Quantum Electron. , 1612 - 1631
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