Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection

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Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection

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The effect of trench-oxide depth on the α-particle-induced charge collection is analysed for various junction sizes. Simulation results indicate that the influence of trench-oxide depth on the charge collection substantially increases as the junction size is reduced. Confininement of the charge by the trench oxide in the reduced junction size is identified as a cause of this effect.

Inspec keywords: integrated circuit reliability; isolation technology; alpha-particle effects; DRAM chips; cellular arrays

Other keywords: junction-size dependence; memory cell size; α-particle-induced charge collection; DRAMs; trench-oxide depth

Subjects: Surface treatment (semiconductor technology); Surface treatment and coating techniques; Maintenance and reliability; Memory circuits; Radiation effects (semiconductor technology); Reliability

References

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      • H. Shin . Modeling of alpha-particle-induced soft error rate in DRAM. IEEE Trans. Electron Devices , 1850 - 1857
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      • B. Takeda , K. Takeuchi , D. Hisamoto , T. Toyabe , K. Ohshima , K. Itoh . A cross section of α-particle-induced soft-error phenomena in VLSI's. IEEE Trans. Electron Devices , 2567 - 2575
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      • H. Shin . Unified model for junction size, substrate doping, and energy dependenceof alpha-particle-induced charge collection. Electron. Lett. , 1880 - 1882
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