The effect of trench-oxide depth on the α-particle-induced charge collection is analysed for various junction sizes. Simulation results indicate that the influence of trench-oxide depth on the charge collection substantially increases as the junction size is reduced. Confininement of the charge by the trench oxide in the reduced junction size is identified as a cause of this effect.
References
-
-
1)
-
K. Takeuchi ,
K. Shimohigashi ,
E. Takeda ,
B. Yamasaki ,
T. Toyabe ,
K. Itoh
.
Alpha-particle-induced charge collection measurements for megabit DRAMcells.
IEEE Trans. Electron Devices
,
1644 -
1650
-
2)
-
H. Shin
.
Modeling of alpha-particle-induced soft error rate in DRAM.
IEEE Trans. Electron Devices
,
1850 -
1857
-
3)
-
B. Takeda ,
K. Takeuchi ,
D. Hisamoto ,
T. Toyabe ,
K. Ohshima ,
K. Itoh
.
A cross section of α-particle-induced soft-error phenomena in VLSI's.
IEEE Trans. Electron Devices
,
2567 -
2575
-
4)
-
H. Shin
.
Unified model for junction size, substrate doping, and energy dependenceof alpha-particle-induced charge collection.
Electron. Lett.
,
1880 -
1882
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20000802
Related content
content/journals/10.1049/el_20000802
pub_keyword,iet_inspecKeyword,pub_concept
6
6