Electromigration-induced failure of GaN multi-quantum well light emitting diode

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Electromigration-induced failure of GaN multi-quantum well light emitting diode

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The reliability characteristics of a multi-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities have been investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In.

Inspec keywords: semiconductor device reliability; failure analysis; electromigration; quantum well devices; indium compounds; gallium compounds; light emitting diodes; III-V semiconductors; semiconductor quantum wells; current density; wide band gap semiconductors

Other keywords: GaN-InGaN; stress current densities; multi-quantum well LED; MQW light emitting diode; GaN/InGaN LED; LED device lifetime; electromigration-induced failure; GaN MQW LED; contact electromigration failure model; reliability characteristics

Subjects: Maintenance and reliability; Optoelectronics manufacturing; Light emitting diodes; Semiconductor superlattices, quantum wells and related structures; Reliability

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