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Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA

Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA

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A threshold current of 40 µA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching.

Inspec keywords: gallium arsenide; microdisc lasers; claddings; optical fabrication; laser cavity resonators; indium compounds; quantum well lasers; laser beams; III-V semiconductors; gallium compounds; sputter etching

Other keywords: disk diameter; threshold current; 40 muA; GaInAsP-InP; symmetric post-claddings; GaInAsP microdisk injection laser; Cl2-Xe; inductively coupled plasma etching; GaInAsP; GaInAsP-InP microdisk injection laser; Cl2/Xe; continuous wave lasing

Subjects: Design of specific laser systems; Laser resonators and cavities; Semiconductor lasers; Laser resonators and cavities; Laser beam interactions and properties; Optical fabrication, surface grinding; Lasing action in semiconductors; Plasma applications in manufacturing and materials processing; Surface treatment and degradation in semiconductor technology; Laser beam characteristics and interactions

References

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      • S.L. McCall , A.F.J. Levi , R.E. Slusher , S.J. Pearton , R.A. Logan . Whispering gallery mode microdisk lasers. Appl. Phys. Lett. , 3 , 289 - 291
    2. 2)
      • J.S. Osinski , Y. Zou , P. Grodzinski , A. Mathur , P.D. Dapkus . Low-threshold-current-density 1.5 µm lasers using compressive strainedInGaAsP quantum wells. IEEE Photonics Technol. Lett. , 1 , 10 - 13
    3. 3)
      • T. Baba , M. Fujita , A. Sakai , M. Kihara , R. Watanabe . Lasing characteristicsof GaInAsP/InP strained quantum-well microdisk injection lasers withdiameter of 2–10 µm. IEEE Photonics Technol. Lett. , 7 , 878 - 880
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      • A. Matsutani , H. Ohtuki , F. Koyama , K. Iga . Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma. Jpn. J. Appl. Phys. , 4260 - 4261
    5. 5)
      • M. Fujita , A. Sakai , T. Baba . Ultra-small and ultra-low threshold GaInAsP-InP microdisk injection lasers- design, fabrication, lasing characteristics and spontaneous emission factor. IEEE J. Sel. Topics Quantum Electron. , 3 , 673 - 681
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