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Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA

Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA

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A threshold current of 40 µA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching.


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