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Transient processes in AlGaN/GaN heterostructure field effect transistors

Transient processes in AlGaN/GaN heterostructure field effect transistors

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The authors report on the correlation between transient behaviour and 1/f noise in GaN/AlGaN heterostructure field effect transistors (HFETs) and novel GaN/AlGaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). When the HFETs were switched from the OFF to ON position, they exhibited non-exponential transient processes with characteristic times from 10-7 to 10-2 s. The transient behaviour correlated with the level of 1/f noise. MOS-HFETs fabricated on the same wafer as the HFETs did not exhibit such a transient (within the time resolution of the measurement setup, which was a few nanoseconds).

http://iet.metastore.ingenta.com/content/journals/10.1049/el_20000573
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