Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures

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Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures

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Surface acoustic wave (SAW) velocities have been measured on the free and metallised surfaces of GaN layers grown by metal organic chemical vapour deposition on (0001) sapphire substrates. The measurements were performed using the acousto-optic diffraction technique in the frequency range 100 – 400 MHz for SAW propagation direction along the [112̄0] sapphire axis. The deposition of thin aluminium films on the GaN surface reduced the SAW velocity up to 1% as compared to that on the free surface of the GaN-on-sapphire structure. The level of reduction was found to increase linearly with the acoustic frequency and GaN layer thickness.

Inspec keywords: metallisation; surface acoustic wave devices; gallium compounds; aluminium; ultrasonic velocity; sapphire

Other keywords: thin Al films; Al-GaN-Al2O3; SAW velocities; Al2O3; 100 to 400 MHz; GaN-on-sapphire structures; metallisation effect; GaN layer thickness; acoustic frequency; MOCVD deposition; (0001) sapphire substrates; surface acoustic wave velocity; acousto-optic diffraction technique

Subjects: Ultrasonics, quantum acoustics, and physical effects of sound; Transduction; devices for the generation and reproduction of sound; Acoustic wave devices

References

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