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Reduction of epitaxial alignment in n+-p poly-Si emitter diode due to gettering of P and As by Ar implantation

Reduction of epitaxial alignment in n+-p poly-Si emitter diode due to gettering of P and As by Ar implantation

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It is demonstrated that Ar implantation can retard the epitaxial realignment of poly-Si/Si in an As- or P-doped n+-p poly-emitter diode during BF2 implantation. This is believed to be due to the gettering of As, P, and F by bubble-like defects created by the Ar implantation used to reduce the pile-up of these dopants at the poly-Si/Si interface. Consequently, there is less break-up of the interface oxide, resulting in a reduction in epitaxial realignment.

References

    1. 1)
      • T.H. Ning , R.D. Isaac . Effect of emitter contact on current gain ofsilicon bipolar devices. IEEE Trans. Electron Devices , 2051 - 2055
    2. 2)
      • G.L. Patton , J.C. Bravman , J.D. Plummer . Physics, technology, and modeling of polysilicon emitter contacts forVLSI bipolar transistors. IEEE Trans. Electron Devices , 1754 - 1768
    3. 3)
      • S.A. Ajuria , R. Reif . Early stage evolution kinetics of thepolysilicon/single-crystal silicon interfacial oxide upon annealing. J. Appl. Phys. , 662 - 667
    4. 4)
      • S.L. Wu , C.L. Lee , T.F. Lei , C.F. Chen , L.J. Chen , K.Z. Ho , Y.C. Ling . Enhancement of oxide break-up by implantation of fluorine in poly-Sicontacted p+-n shallow junction formation. IEEE Electron Device Lett. , 120 - 122
    5. 5)
      • T. Gravier , J. Kirtsch , C. d'Anterroches , A. Chantre . Fluorine effects in n-p-n double-diffused polysilicon emitter bipolartransistors. IEEE Electron Device Lett. , 434 - 436
    6. 6)
      • D.E. Burk , S.-Y. Yung . Experimental verification of the extentended-conceptfor phosphorus-implanted self-aligned polysilicon-contacted bipolartransistors. Solid-State Electron. , 1127 - 1138
    7. 7)
      • L.S. Lee , C.L. Lee . Argon ion-implantation on polysilicon or amorphous-siliconfor boron penetration suppression in p+ PMOSFET. IEEE Trans. Electron Devices , 1737 - 1744
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