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Very low saturation intensity and ultrafast response of 1.5 µm intersubband absorption in n-doped InGaAs/AlAsSb MQW

Very low saturation intensity and ultrafast response of 1.5 µm intersubband absorption in n-doped InGaAs/AlAsSb MQW

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It is theoretically shown that an extremely low saturation intensity (< 0.05 mW/µm2) as well as an ultrafast (~1.3 ps) response are possible in 1.5 µm intersubband absorption in n-doped InGaAs/AlAsSb multiple quantum wells with electron concentration of ~1 × 1019 cm-3. Such a low saturation intensity is ascribed to the δ-function-like absorption spectra of the intersubband transition and a reduced dephasing rate achieved by high doping.

References

    1. 1)
      • K.L. Vodopyanov , V. Chazapis , C.C. Phillips , B. Sung , J.S. Harris . Intersubband absorption saturation study of narrow III-V multiple quantumwells in the λ = 2.8–9 µm spectral range. Semicond. Sci. Technol. , 708 - 718
    2. 2)
      • T. Asano , S. Noda . Relaxation time of short wavelength intersubband transition in InGaAs/AlAsquantum wells. Jpn. J. Appl. Phys. , 11 , 6020 - 6024
    3. 3)
      • T. Mozume , H. Yoshida , A. Neogi , M. Kudo . 1.45 µm intersubband absorption in InGaAs/AlAsSb grown by molecularbeam epitaxy. Jpn. J. Appl. Phys. , 1286 - 1289
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