Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering

Access Full Text

Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Implantation-induced disordering is applied to define laterally structured waveguiding in ZnCdSe single quantum well lasers. Owing to the intermixing-induced lateral step of the refractive index, the emission characteristics are significantly improved. A reduction in the threshold current density from 276 to 96 A/cm2 is achieved.

Inspec keywords: quantum well lasers; current density; laser beams; optical fabrication; II-VI semiconductors; waveguide lasers; refractive index; cadmium compounds; zinc compounds; laser variables measurement; semiconductor doping; ion implantation

Other keywords: fabrication; refractive index; SQW laser; emission characteristics; laterally structured waveguiding; ultra-low threshold current density; implantation induced disordering; single quantum well lasers; threshold current density; ZnCdSe laser; ZnCdSe; intermixing-induced lateral step

Subjects: Doping and implantation of impurities; Optical variables measurement; Semiconductor doping; Laser beam characteristics and interactions; Optical fabrication, surface grinding; Lasing action in semiconductors; Laser beam interactions and properties; Design of specific laser systems; Semiconductor lasers

References

    1. 1)
      • K. Katayama , H. Yao , F. Nakanishi , H. Doi , A. Saegusa , N. Okuda , T. Yamada , H. Matsubara , M. Irikura , T. Matsuoka , T. Takebe , S. Nishine , T. Shirakawa . Lasing characteristics of low threshold ZnSe-based blue/green laser diodesgrown on conductive ZnSe substrates. Appl. Phys. Lett. , 102 - 104
    2. 2)
      • S. Kijima , H. Okuyama , Y. Sanaka , T. Kobayashi , A. Tomiya , A. Ishibashi . Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II-VI laserdiodes. Appl. Phys. Lett. , 235 - 237
    3. 3)
      • M. Kuttler , M. Straßburg , O. Stier , R. Heitz , U.W. Pohl , D. Bimberg , E. Kurtz , J. Nürnberger , M. Behringer , D. Hommel . Doping dependent ZnCdSe/ZnSe-superlattices disordering. Appl. Phys. Lett. , 243 - 245
    4. 4)
      • T. Yokogawa , J. Merz , H. Luo , J. Furdyna , S. Jau , M. Kuttler , D. Bimberg . Disordering of CdZnSe/ZnSe strained superlattices by ion implantation. Jpn. J. Appl. Phys. , 1159 - 1161
    5. 5)
      • M. Kuttler , M. Straßburg , V. Türck , U.W. Pohl , D. Bimberg , E. Kurtz , G. Landwehr , D. Hommel . Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering. Appl. Phys. Lett. , 2647 - 2649
    6. 6)
      • A. Ishibashi . II-VI blue-green light emitters. J. Cryst. Growth , 555 - 565
    7. 7)
      • G.P. Agrawal , N.K. Dutta . (1993) Semiconductor lasers.
    8. 8)
      • Holonyak, N.: `Semiconductor device fabrication with disordering elements introducedinto active region', USA, 4 511 408, 1985.
    9. 9)
      • Straßburg, M., Kuttler, M., Pohl, U.W., Bimberg, D., Behringer, M., Hommel, D.: `Lateral index guided ZnCdSe-based lasers by selective implantation-induceddisordering', Proc. 2nd ISBLLED, 1998, p. 425–428.
    10. 10)
      • M. Kuttler , M. Straßburg , V. Türck , R. Engelhardt , U.W. Pohl , D. Bimberg , M. Behringer , D. Hommel , J. Nürnberger , G. Landwehr . Efficient lateral index guiding of II-VI laser structures by implantation-induceddisordering. J. Cryst. Growth , 566 - 570
    11. 11)
      • E. Kato , H. Noguchi , M. Nagai , H. Okuyama , S. Kijima , A. Ishibashi . Significant progress in II-VI blue-green laser diode lifetime. Electron. Lett. , 3 , 282 - 284
    12. 12)
      • D.G. Deppe , L.G. Guido , N. Holonyak , K.C. Hsieh , R.D. Burnham , R.L. Thornton , T.L. Paoli . Stripe-geometry quantum well heterostructure AlxGa1-xAs-GaAslasers defined by defect diffusion. Appl. Phys. Lett. , 510 - 512
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20000128
Loading

Related content

content/journals/10.1049/el_20000128
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading