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Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering

Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering

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Implantation-induced disordering is applied to define laterally structured waveguiding in ZnCdSe single quantum well lasers. Owing to the intermixing-induced lateral step of the refractive index, the emission characteristics are significantly improved. A reduction in the threshold current density from 276 to 96 A/cm2 is achieved.

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