Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction
Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction
- Author(s): M. Arzberger ; M. Lohner ; G. Böhm ; M.-C. Amann
- DOI: 10.1049/el:20000039
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- Author(s): M. Arzberger 1 ; M. Lohner 1 ; G. Böhm 1 ; M.-C. Amann 1
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View affiliations
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Garching, Germany
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Affiliations:
1: Walter Schottky Institut, Technische Universität München, Garching, Germany
- Source:
Volume 36, Issue 1,
6 January 2000,
p.
87 – 88
DOI: 10.1049/el:20000039 , Print ISSN 0013-5194, Online ISSN 1350-911X
A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3 × 10-6 Ωcm2.
Inspec keywords: buried layers; light emitting diodes; indium compounds; contact resistance; semiconductor doping; gallium arsenide; III-V semiconductors; ohmic contacts; heavily doped semiconductors; p-n heterojunctions; molecular beam epitaxial growth; surface emitting lasers
Other keywords:
Subjects: Semiconductor doping; Light emitting diodes; Semiconductor junctions; Vacuum deposition; Vacuum deposition; Design of specific laser systems; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor lasers; Doping and implantation of impurities; Lasing action in semiconductors; Contact resistance, contact potential, and work functions
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