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Improving thermal stability of shallow junctions by N2+ pre-implantation

Improving thermal stability of shallow junctions by N2+ pre-implantation

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A highly thermally stable shallow p+/n junction has been fabricated. It was found that N2+ pre-implantation can lead to a significant stabilisation of CoSi2 films during high temperature annealing. TEM delineation results confirm that the CoSi2 film remains smooth and uniform with the N2+ pre-implantation while agglomeration occurs on the non-N2+-implanted sample.

References

    1. 1)
      • F. La Via , E. Rimini . Electrical characterization of ultra-shallow junctions formed by diffusionfrom a CoSi2 layer. IEEE Trans. , 526 - 534
    2. 2)
      • F. La Via , C. Spinella , E. Rimini . Diffusion and precipitation of As from a CoSi2 diffusion source. Appl. Surf. Sci. , 175 - 181
    3. 3)
      • Q. Wang , C.M. Osburn , C.A. Canovai . Ultra-shallow junction formation using silicide as a diffusion sourceand low thermal budget. IEEE Trans. Electron Device , 2486 - 2496
    4. 4)
      • T. Murakami , T. Kuroi , Y. Kawasaki , M. Inuishi , Y. Matsui , A. Yasuoka . Application of nitrogen implantation to ULSI. Nuclear Instrum. Methods Phys. Res. B , 257 - 261
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