Improving thermal stability of shallow junctions by N2+ pre-implantation

Improving thermal stability of shallow junctions by N2+ pre-implantation

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A highly thermally stable shallow p+/n junction has been fabricated. It was found that N2+ pre-implantation can lead to a significant stabilisation of CoSi2 films during high temperature annealing. TEM delineation results confirm that the CoSi2 film remains smooth and uniform with the N2+ pre-implantation while agglomeration occurs on the non-N2+-implanted sample.


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