High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 µm

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High peak power (1.1 W) (Al)GaAs quantum cascade laser emitting at 9.7 µm

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A unipolar quantum cascade laser operating at 9.7 µm and a temperature of 77 K based on the AlGaAs material system is reported. Collected peak output powers > 1 W per facet are demonstrated, which it is believed have never been achieved before for quantum cascade lasers emitting at this wavelength. The maximum slope efficiency is 240 mW/A.

Inspec keywords: quantum well lasers; III-V semiconductors; laser transitions; gallium arsenide; aluminium compounds

Other keywords: 1.1 W; (Al)GaAs quantum cascade laser; AlGaAs; semiconductor laser; 9.7 micron; unipolar quantum cascade laser; high peak power operation; 77 K

Subjects: Design of specific laser systems; Semiconductor lasers; Lasing action in semiconductors

References

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