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Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz

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Published

MBE-grown metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates are presented. A linearly-graded InAlGaAs buffer layer is employed for strain relaxation. A mobility of 9520 cm2/Vs and a sheet density of 2.85 × 1012 cm-2 are achieved at room temperature. Devices with gate lengths ranging from 0.18 to 1.0 µm have been fabricated. Large drain currents and extrinsic transconductances with values up to 900 mA/mm and 1.1 mS/mm, respectively, are reported. For a 0.18 µm gate length device, a unity current gain cutoff frequency (fT) of 204 GHz is obtained. To the authors' knowledge, this is the highest fT to date for a metamorphic HEMT on GaAs.

Inspec keywords: III-V semiconductors; molecular beam epitaxial growth; millimetre wave field effect transistors; gallium arsenide; high electron mobility transistors; aluminium compounds; indium compounds; microwave field effect transistors

Other keywords: In0.52Al0.48As-In0.53Ga0.47As; unity current gain cutoff frequency; extrinsic transconductances; strain relaxation; 204 GHz; linearly-graded InAlGaAs buffer layer; drain currents; 1.1 mS/mm; sheet density; gate lengths; GaAs; mobility; MBE-grown metamorphic HEMT; GaAs substrate; 0.18 to 1 micron

Subjects: Solid-state microwave circuits and devices; Other field effect devices; Vacuum deposition

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19991267
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