Logic circuit elements using single-electron tunnelling transistors

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Logic circuit elements using single-electron tunnelling transistors

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Logic elements have been demonstrated using single-electron tunnelling transistors. The transistors are biased at different positions in the conductance oscillation cycle so that they are analogous to either n-type or p-type transistors. The circuit operation is stable at a temperature of 1.6 K despite the low gain of the transistors.

Inspec keywords: circuit stability; single electron transistors; NAND circuits; logic gates; integrated logic circuits

Other keywords: single-electron tunnelling transistors; conductance oscillation cycle; stable circuit operation; logic circuit elements; 1.6 K; biasing

Subjects: Logic and switching circuits; Logic circuits; Semiconductor logic elements

References

    1. 1)
      • N. Asahi , M. Akazawa , Y. Amemiya . Single-electron logic device based on the binary decision diagram. IEEE Trans. Electron Devices , 7 , 1109 - 1116
    2. 2)
      • K. Tsukagoshi , B.W. Alphenaar , K. Nakazato . Operation of logic function in a Coulomb blockade device. Appl. Phys. Lett. , 17 , 2515 - 2517
    3. 3)
      • R.A. Smith , H. Ahmed . Gate controlled Coulomb blockade effects in the conduction of a siliconquantum wire. J. Appl. Phys. , 6 , 2699 - 2703
    4. 4)
      • K. Nakazato , H. Ahmed . The multiple-tunnel junction and its application to single-electron memoryand logic-circuits. Jpn. J. Appl. Phys. Part 1-Regular Papers, Short Notes & ReviewPapers , 700 - 706
    5. 5)
      • N.J. Stone , H. Ahmed . Silicon single electron memory cell. Appl. Phys. Lett. , 15 , 2134 - 2136
    6. 6)
      • K. Nakazato , R.J. Blaikie , J.R.A. Cleaver , H. Ahmed . Single-electron memory. Electron. Lett. , 4 , 384 - 385
    7. 7)
      • J.R. Tucker . Complementary digital logic based on the Coulomb blockade. J. Appl. Phys. , 9 , 4399 - 4413
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