First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor

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First epitaxial pnp bipolar transistor on diamond with deep nitrogen donor

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Published

Vertical pnp bipolar transistors on diamond have been fabricated by doping the base with deep nitrogen donor (EC – ED = 1.7 eV). The pn junction formed by the nitrogen donors and boron acceptors was confirmed. Transistor characteristics in common-emitter and common-base modes were measured at room temperature.

Inspec keywords: diamond; bipolar transistors; semiconductor epitaxial layers; nitrogen; deep levels; elemental semiconductors; semiconductor doping; wide band gap semiconductors

Other keywords: boron acceptor; doping; deep nitrogen donor; diamond substrate; pn junction; epitaxial pnp bipolar transistor; C:N-C:B

Subjects: Elemental semiconductors; Bipolar transistors; Semiconductor doping

References

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      • E. Kohn , W. Ebert , B. Dischler , C. Wild . (1998) Electronic devices on CVD diamond, Low pressure synthetic diamond.
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      • L.S. Plano , L.S. Pan , D.R. Kania . (1995) Diamond: electronic properties and applications.
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      • A. Bergmaier , G. Dollinger . Detection of nitrogen in CVD diamond. Diamond Related Mater. , 995 - 997
    4. 4)
      • J.F. Prins . Appl. Phys. Lett.. Appl. Phys. Lett.
    5. 5)
      • J.H. Edgar . (1999) Gallium nitride and related semiconductors.
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