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Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes

Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes

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The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation, the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance.

References

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      • W.H. Guggina , A.A. Ketterson , E. Andideh , J. Hughes , I. Adesida , S. Caracci , J. Kolodzey . Characterization of GaAs/AlxGa1–xAsselective reactive ion etching in SiCl4/SiF4 plasmas. J. Vac. Sci. Technol. B , 6 , 1956 - 1959
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      • D.G. Ballegeer , S. Agarwala , M. Tong , K. Nummila , A.A. Ketterson , I. Adesida , J. Griffin , M. Spencer . Selective reactive ion etching in SiCl4/SiF4 plasmasfor gate recess in GaAs/AlGaAs modulation-dopedfield effect transistors. J. Vac. Sci. Technol. B , 3 , 618 - 627
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