High power 4.6 µm LEDs for CO detection grown by LPE

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High power 4.6 µm LEDs for CO detection grown by LPE

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High-power light-emitting diodes operating at 4.6 µm with potential for use in an optical carbon monoxide sensor have been fabricated by liquid phase epitaxy (LPE) with a pulsed output power in excess of 1 mW at room temperature. The InAs0.89Sb0.11 in the LED active region was purified using rare earth ion gettering of the growth solution during epitaxy.

Inspec keywords: light emitting diodes; getters; optical sensors; liquid phase epitaxial growth; gas sensors; semiconductor growth; III-V semiconductors; indium compounds

Other keywords: 4.6 mum; LED active region; high-power LEDs; liquid phase epitaxy; growth solution; room temperature; purification; pulsed output power; CO detection; CO; rare earth ion gettering; 1 mW; InAs0.89Sb0.11; optical CO sensor; LPE growth

Subjects: Chemical variables measurement; Light emitting diodes; Deposition from liquid phases; Chemical sensors

References

    1. 1)
      • A.A. Popov , V.V. Sherstnev , Y.P. Yakolev , A.N. Baranov , C. Alibert . Powerful midinfrared LEDs for pollution monitoring. Electron. Lett. , 86 - 87
    2. 2)
      • H.H. Gao , A. Krier , V. Sherstnev . InAsSb/InAsSbP light emitting diodes for detection of CO and CO2at room temperature. to be published in J. Phys. D., Appl. Phys.
    3. 3)
      • A. Krier , H.H. Gao , V. Sherstnev . Purification of epitaxial InAs grown by liquid phase epitaxy using gadoliniumgettering. J. Appl. Phys. , 12 , 8419 - 8422
    4. 4)
      • H. Gao , A. Krier , V. Sherstnev . High quality InAs grown by liquid phase epitaxy using gadolinium gettering. to be published in Semicond. Sci. Technol. , 441 - 445
    5. 5)
      • B. Matveev , N. Zotova , S. Karandashor , M. Remenny , N. Llinskaya , N. Stus , V. Shustov , G. Talalakin , J. Malinen . InAsSbP/InAs LEDs for the 3.3–5.5 µm spectral range. IEE Proc. Optoelectron.
    6. 6)
      • S.D. Smith , A. Vass , P. Bramley , J.G. Crowder , C.H. Wang . Comparison of IR LED gas sensors with thermal source products. IEE Proc. Optoelectron.
    7. 7)
      • Mao, Y., Krier, A.: `Uncooled 4.2 µm light emitting diodes based on InAs', Materials for Optoelectronics Conference (Sheffield) 95, OpticalMaterials, 1996, 6, p. 55–81.
    8. 8)
      • A. Krier , Y. Mao . 2.5 µm light emitting diodes in InAs0.36Sb0.20P0.44/InAsfor HF detection. IEE Proc. Optoelectron. , 355 - 359
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