A low-cost non-volatile memory device using a standard CMOS process without additional processing steps is investigated for embedded applications. The cell consists of a PMOS transistor in which no electrical contact is made to the gate electrode and a series NMOS access transistor. Experimental data show that sufficient read current and disturb lifetime can be achieved. Data retention characteristics are also examined.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990983
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