Non-volatile memory device with true CMOS compatibility

Non-volatile memory device with true CMOS compatibility

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A low-cost non-volatile memory device using a standard CMOS process without additional processing steps is investigated for embedded applications. The cell consists of a PMOS transistor in which no electrical contact is made to the gate electrode and a series NMOS access transistor. Experimental data show that sufficient read current and disturb lifetime can be achieved. Data retention characteristics are also examined.


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