Demonstration of efficient p-type doping in AlxGa1–xN/GaN superlattice structures

Access Full Text

Demonstration of efficient p-type doping in AlxGa1–xN/GaN superlattice structures

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Enhanced acceptor activation, reduced acceptor binding energy and enhanced conductivity are demonstrated in AlxGa1–xN/GaN doped superlattice structures. An acceptor activation energy of 58 meV is demonstrated in an Al0.20Ga0.80N/GaN superlattice structure with a period of 200 Å. This value is significantly lower than the 200 meV activation energy measured in bulk GaN. The dependence of activation energy on the Al content of the superlattice is consistent with that predicted by the theoretical model. The demonstration of improved p-type doping characteristics in GaN is expected to enable the realisation of electronic and optoelectronic devices with improved properties.

Inspec keywords: electrical conductivity; gallium compounds; binding energy; aluminium compounds; III-V semiconductors; impurity states; semiconductor superlattices; semiconductor doping

Other keywords: 58 meV; acceptor activation; p-type doping characteristics; AlGaN-GaN; acceptor binding energy; conductivity; superlattice structures; optoelectronic devices; III-V semiconductors

Subjects: Doping and implantation of impurities; Electron states in low-dimensional structures; Semiconductor superlattices, quantum wells and related structures; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor doping

References

    1. 1)
      • E.F. Schubert , W. Grieshaber , I.D. Goepfert . Enhancement of deep acceptoractivation in semiconductors by superlattice doping. Appl. Phys. Lett. , 3737 - 3739
    2. 2)
      • W. Götz , N.M. Johnson , J. Walker , D.P. Bour , R.A. Street . Activation of acceptorsin Mg-doped GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. , 667 - 669
    3. 3)
      • Goepfert, I.D., and Schubert, E.F. unpublished, 1999.
    4. 4)
      • F. Bernardini , V. Fiorentini , A. Bosin . Theoretical evidence for efficient p-typedoping of GaN using beryllium. Appl. Phys. Lett. , 2990 - 2992
    5. 5)
      • T. Tanaka , A. Watanabe , H. Amano , Y. Kobayashi , I. Akasaki , S. Yamazaki , M. Koike . P-type conduction in Mg-doped GaN and Al0.08Ga0.92Ngrown by metalorganicvapor phase epitaxy. Appl. Phys. Lett. , 593 - 594
    6. 6)
      • M. Katsuragawa , S. Sota , M. Komori , C. Anbe , T. Takauchi , H. Sakai , H. Amano , I. Akasaki . Thermal ionization energy of Si and Mg in AlGaN. J. Cryst. Growth , 528 - 531
    7. 7)
      • S. Fischer , C. Wetzel , E.E. Haller , B.K. Meyer . On p-type doping in GaN – acceptor binding energies. Appl. Phys. Lett. , 1298 - 1300
    8. 8)
      • J.W. Lee , S.J. Pearton , J.C. Zolper , R.A. Stall . Hydrogen passivation of Ca acceptors in GaN. Appl. Phys. Lett. , 2102 - 2104
    9. 9)
      • C. Ronning , E.P. Carlson , D.B. Thomson , R.F. Davis . Optical activation of Be implanted into GaN. Appl. Phys. Lett. , 1622 - 1624
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990758
Loading

Related content

content/journals/10.1049/el_19990758
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading