Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

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Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 µm under pulsed operation at room temperature.


    1. 1)
      • GaInNAs: A novel material for long-wavelength-range laser diodes withexcellent high-temperature performance
    2. 2)
      • GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beamepitaxy
    3. 3)
      • Photoluminescence of As-grown and thermally annealed InGaAsN/GaAs quantumwells grown by molecular beam epitaxy
    4. 4)
      • Room-temperature operation of GaInNAs/GaInPdouble-heterostructure laser diodes grown by metalorganic chemical vapordeposition
    5. 5)
      • Room-temperature pulsed operation of strained GaInNAs/GaAs double quantumwell laser diode grown by metal organic chemical vapour deposition
    6. 6)
      • Low temperature growth of GaInNAs/GaAs quantum wells by metalorganicchemical vapor deposition using tertiarybutylarsine
    7. 7)
      • Room-temperature lasing operation of GaInNAs-GaAs single quantum-welllaser diodes
    8. 8)
      • Room-temperature pulsed operation of 1.3-µm GaInNAs/GaAs laserdiode
    9. 9)
      • 1.3-µm continuous-wave lasing operation in GaInNAs quantum-welllasers
    10. 10)
      • Surfactants in epitaxial growth
    11. 11)
      • Delayed relaxation by surfactant action in highly strained III-V semiconductorepitaxial layer

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