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Au metal-induced lateral crystallisation (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate

Au metal-induced lateral crystallisation (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate

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The Au metal-induced lateral crystallisation (Au-MILC) of a-Si:H film has been investigated under various crystallisation conditions. By annealing at 400°C for 10 h, the MILC rate induced by Au can be as large as 15.9 µm/h which is much faster than that possible with Ni and Pd. Owing to the very low annealing temperature treatment (≤ 400°C), the Au-MILC process represents an important technique for fabricating low cost ICs with poly-Si TFT structure on conventional glass substrate.

References

    1. 1)
      • S.W. Lee , S.K. Joo . Low temperature poly-Si thin-film transistor fabrication by metal-inducedlateral crystallization. IEEE Electron Device Lett. , 4 , 160 - 162
    2. 2)
      • S.W. Lee , T.H. Ihn , S.K. Joo . Fabrication of high-mobility p-channel poly-Si thin film transistorby self-aligned metal-induced lateral crystallization. IEEE Electron Device Lett. , 8 , 407 - 409
    3. 3)
      • G.A. Bhat , Z. Jin , H.S. Kwok , M. Wong . Effects of longitudinal grain boundaries on the performance of MILC-TFT's. IEEE Electron Device Lett. , 2 , 97 - 99
    4. 4)
      • T. Aoyama , G. Kawachi , N. Konishi , T. Suzuki , Y. Okajima , K. Miyata . Crystallization of LPCVD silicon films by low temperature annealing. J. Electrochem. Soc. , 4 , 1169 - 1173
    5. 5)
      • Z. Jin , K. Moulding , H.S. Kwok , M. Wong . The effect of extended heat treatment on Ni induced lateral crystallizationof amorphous silicon thin films. IEEE Trans. , 1 , 78 - 82
    6. 6)
      • S.W. Lee , Y.C. Jeon , S.K. Joo . Pd induced lateral crystallization of amorphous Si thin films. Appl. Phys. Lett. , 13 , 1671 - 1673
    7. 7)
      • L. Hultman , A. Robertsson , H.T.G. Hentzell . Crystallization of amorphous silicon during thin-film gold reaction. J. Appl. Phys. , 9 , 3647 - 3655
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