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High room temperature peak-to-valley current ratio in Si based Esaki diodes

High room temperature peak-to-valley current ratio in Si based Esaki diodes

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Room temperature (RT) IV characteristics of epitaxially grown Si/SiGe/Si p+/i/n+ Esaki diodes are presented. The incorporation of Ge within the intrinsic (i) zone gives rise to an increased peak current density (jP = 3 kA/cm2) and peak-to-valley current ratio (PVCR) compared to pure Si structures (jP = 80 A/cm2). A detailed investigation and optimisation of post-growth annealing has demonstrated a record PVCR of 4.2 for Si based Esaki diodes.

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