Quantitative analysis of Si/GexSi1–x/Si heterojunction bipolar transistors with linearly graded Ge profile

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Quantitative analysis of Si/GexSi1–x/Si heterojunction bipolar transistors with linearly graded Ge profile

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A new experimental methodology for the analysis of Si/GexSi1–x/Si HBT yields quantitative values for the important transistor parameters, such as the energy gap reduction and the built-in electric field due to Ge, and the minority-carrier base diffusion length, lifetime and transit time. The method also enables a charge-control analysis of the base current to be made. A demonstration is presented for a GeSi heterojunction bipolar transistor with a linearly graded Ge profile in the base. The methodology can be extended for arbitrary material composition and doping profile in the base.

Inspec keywords: carrier lifetime; semiconductor materials; heterojunction bipolar transistors; silicon; minority carriers; Ge-Si alloys; doping profiles; elemental semiconductors

Other keywords: built-in electric field; transistor parameters; minority-carrier transit time; energy gap reduction; linearly graded profile; arbitrary material composition; Si-GeSi-Si; heterojunction bipolar transistors; arbitrary doping profile; minority-carrier base diffusion length; minority-carrier lifetime; charge-control analysis

Subjects: Semiconductor doping; Bipolar transistors

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